Crossmark

Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility

Crossref DOI link: https://doi.org/10.1007/s10853-019-03380-4

Published Online: 2019-01-25

Published Print: 2019-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Yuan, Jun-Hui

Zhang, Biao

Song, Ya-Qian

Wang, Jia-Fu

Xue, Kan-Hao https://orcid.org/0000-0002-2894-7912
Miao, Xiang-Shui
Funding

Funding for this research was provided by:

National Key Research and Development Program of China (Materials Genome Initiative)

National Key Research and Development Program of China (2017YFB0701700)

National Natural Science Foundation of China (11704134)

Fundamental Research Funds for the Central Universities of China (HUST:2016YXMS212)

Hubei "Chu-Tian Young Scholar" program

China Scholarship Council (201806165012)
License Information

Text and Data Mining valid from 2019-01-25
More Information

Article History

Received: 30 November 2018

Accepted: 18 January 2019

First Online: 25 January 2019