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Semipolar ( $$ 1\bar{1}01 $$ 1 1 ¯ 01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate

Crossref DOI link: https://doi.org/10.1007/s10853-019-03473-0

Published Online: 2019-02-25

Published Print: 2019-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wang, Qi

Yuan, Guodong https://orcid.org/0000-0002-5895-5016
Liu, Wenqiang

Zhao, Shuai

Liu, Zhiqiang

Chen, Yu

Wang, Junxi

Li, Jinmin
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51472229, 61422405, 11574301)

National Natural Science Foundation of Tianjin (14JCQNJC01000)

National Science Foundation for Post-doctoral Scientists of China (2016M600231)
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Article History

Received: 25 December 2018

Accepted: 19 February 2019

First Online: 25 February 2019