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A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application

Published Online: 2024-07-16

Published Print: 2024-08

Authors

Komal, Km.

Singh, Mukhtiyar

Singh, Bharti https://orcid.org/0000-0002-4066-4296
Funding

Funding for this research was provided by:

Human Resource Development Group (08/133(0025)/2018-EMR-I)
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Text and Data Mining valid from 2024-07-16

Version of Record valid from 2024-07-16
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Article History

Received: 28 March 2024

Accepted: 2 July 2024

First Online: 16 July 2024

Declarations

:

: A conflict of interest is not present, according to the authors.

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