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Correction to: Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering

Crossref DOI link: https://doi.org/10.1007/s10853-024-10575-x

Published Online: 2025-01-06

Published Print: 2025-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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