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Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Crossref DOI link: https://doi.org/10.1007/s10854-014-2149-y

Published Online: 2014-08-02

Published Print: 2014-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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