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The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Crossref DOI link: https://doi.org/10.1007/s10854-014-2159-9

Published Online: 2014-07-15

Published Print: 2014-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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