Aluminum doping property in SiC epilayers grown at high growth rate using chloride-based CVD
Crossref DOI link: https://doi.org/10.1007/s10854-015-2689-9
Published Online: 2015-01-18
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Yun
Zhao, Zhifei
Zhu, Zhiming
Li, Zhonghui
Text and Data Mining valid from 2015-01-18
