A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN
Crossref DOI link: https://doi.org/10.1007/s10854-015-2926-2
Published Online: 2015-03-13
Published Print: 2015-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Qin, Xiaoye
Cheng, Lanxia
McDonnell, Stephen
Azcatl, Angelica
Zhu, Hui
Kim, Jiyoung
Wallace, Robert M.
Text and Data Mining valid from 2015-03-13