High performance resistive switching memory organic films prepared through PPy growing on graphene oxide substrate
Crossref DOI link: https://doi.org/10.1007/s10854-015-3583-1
Published Online: 2015-08-06
Published Print: 2015-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Yongming
Ni, Xiuyuan
Ding, Shijin
Funding for this research was provided by:
Science and Technology Commission of Shanghai Municipality (13DZ1108904)
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