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The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Crossref DOI link: https://doi.org/10.1007/s10854-015-3645-4

Published Online: 2015-09-07

Published Print: 2015-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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