Crossmark

Influence of annealing time on microstructure and dielectric properties of (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic thin films prepared by sol–gel method

Crossref DOI link: https://doi.org/10.1007/s10854-016-4337-4

Published Online: 2016-01-20

Published Print: 2016-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Shi, Feng

Wang, Jing

Sun, Haiqing
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51042001)

the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (KFJJ201405)
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