Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer
Crossref DOI link: https://doi.org/10.1007/s10854-016-4408-6
Published Online: 2016-02-13
Published Print: 2016-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ni, Yiqiang
He, Liang
Zhou, Deqiu
He, Zhiyuan
Chen, Zijun
Zheng, Yue
Yang, Fan
Shen, Zhen
Zhang, Xiaorong
He, Lei
Wu, Zhisheng
Zhang, Baijun
Liu, Yang
Text and Data Mining valid from 2016-02-13