IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates
Crossref DOI link: https://doi.org/10.1007/s10854-016-4536-z
Published Online: 2016-02-20
Published Print: 2016-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tompkins, R. P.
Khan, M. R.
Green, R.
Jones, K. A.
Leach, J. H.
Text and Data Mining valid from 2016-02-20