Characterization of quaternary AlInGaN films obtained by incorporating Al into InGaN film with the RF reactive magnetron sputtering technology
Crossref DOI link: https://doi.org/10.1007/s10854-016-5490-5
Published Online: 2016-08-10
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Kaifan
Kuo, Dong-Hau
License valid from 2016-08-10