Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors
Crossref DOI link: https://doi.org/10.1007/s10854-016-5718-4
Published Online: 2016-09-24
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chang, Yuan
Wu, Di
Xu, Tingting
Shi, Zhifeng
Tian, Yongtao
Li, Xinjian
Funding for this research was provided by:
National Natural Science Foundation of China (61605174, 11504331)
China Postdoctoral Science Foundation (2015M582194)
License valid from 2016-09-24