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The influence of La/Al atomic ratio on the dielectric constant and band-gap of stack-gate La–Al–O/SiO2 structure

Crossref DOI link: https://doi.org/10.1007/s10854-016-5757-x

Published Online: 2016-11-10

Published Print: 2017-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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