Crossmark

Effect of buffer thickness on the properties of Al-doped ZnO thin films prepared by DC magnetron sputtering

Crossref DOI link: https://doi.org/10.1007/s10854-017-6415-7

Published Online: 2017-02-01

Published Print: 2017-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhu, Ke

Wang, Haibin

Xiao, Faxin

Xu, Feng
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (CN) (11404110)

Outstanding Young Program of Hunan Provincial education department of China (14B046)

the Science and Technology Planning Project of Hengyang (2016KJ15)
License Information

License valid from 2017-02-01