Crossmark

Resistive switching properties of HfxZr1−xO2 thin films for flexible memory applications

Crossref DOI link: https://doi.org/10.1007/s10854-017-6837-2

Published Online: 2017-03-29

Published Print: 2017-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wu, Zhipeng

Zhu, Jun

Liu, Xingpeng
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (CN) (51372030)

National Key Research and development Program of China (2016YFB0700201)
License Information

License valid from 2017-03-29