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Behavior of carrier transports and their sensitivity to solar irradiation for devices that use MoS2 that is directly deposited on Si using the chemical vapor method

Crossref DOI link: https://doi.org/10.1007/s10854-017-7304-9

Published Online: 2017-06-09

Published Print: 2017-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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