Structural and optical properties of electrochemically etched p+-type GaAs surfaces: influence of HF presence in the etching electrolyte
Crossref DOI link: https://doi.org/10.1007/s10854-017-7597-8
Published Online: 2017-07-27
Published Print: 2017-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Naddaf, M.
Funding for this research was provided by:
Atomic Energy Commission of Syria
License valid from 2017-07-27