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On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics

Crossref DOI link: https://doi.org/10.1007/s10854-017-7900-8

Published Online: 2017-09-27

Published Print: 2018-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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