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Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without (NH4)2S x treatment by chemical vapor deposition

Crossref DOI link: https://doi.org/10.1007/s10854-017-7923-1

Published Online: 2017-09-30

Published Print: 2018-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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