Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states
Crossref DOI link: https://doi.org/10.1007/s10854-018-0161-3
Published Online: 2018-10-08
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mönch, Winfried http://orcid.org/0000-0003-3274-4090
Text and Data Mining valid from 2018-10-08
Article History
Received: 5 June 2018
Accepted: 4 October 2018
First Online: 8 October 2018