Optimized nc-Si:H thin films with enhanced optoelectronic properties prepared by micro-waves PECVD used as an effective silicon surface passivation layer
Crossref DOI link: https://doi.org/10.1007/s10854-018-0508-9
Published Online: 2018-12-11
Published Print: 2019-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
El Whibi, Seif
Derbali, Lotfi
Tristant, Pascal
Jaoul, Cedric
Colas, Maggy
Mayet, Richard
Cornette, Julie
Ezzaouia, Hatem
Text and Data Mining valid from 2018-12-11
Article History
Received: 14 August 2018
Accepted: 4 December 2018
First Online: 11 December 2018