Structural design and fabrication of 830 nm GaAsP/AlGaAs low polarization superluminescent diode with tensile-strained wells
Crossref DOI link: https://doi.org/10.1007/s10854-018-9055-7
Published Online: 2018-04-12
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, Shang-jun
Zhou, Yong
Zhou, Shuai
Mo, Cai-ping
Zhao, Hong
Ding, Shi-hao
Tian, Kun
Tang, Zu-rong
Text and Data Mining valid from 2018-04-12
Version of Record valid from 2018-04-12
Article History
Received: 5 December 2017
Accepted: 4 April 2018
First Online: 12 April 2018