Crossmark

Comparative study on slow-state near interface hole traps in NO and Ar annealed N-type 4H-SiC MOS capacitors by ultraviolet light

Published Online: 2018-07-04

Published Print: 2018-08

Authors

Jia, Yifan

Lv, Hongliang

Tang, Xiaoyan

Song, Qingwen

Zhang, Yimen

Zhang, Yuming

Dimitrijev, Sima

Han, Jisheng
Funding

Funding for this research was provided by:

National Key R&D Program of China (2017YFB0102302)
License Information

Text and Data Mining valid from 2018-07-04
More Information

Article History

Received: 30 April 2018

Accepted: 26 June 2018

First Online: 4 July 2018

Document is current