Forward and reverse bias current–voltage (I–V) characteristics in the metal–ferroelectric–semiconductor (Au/SrTiO3/n-Si) structures at room temperature
Crossref DOI link: https://doi.org/10.1007/s10854-018-9767-8
Published Online: 2018-07-31
Published Print: 2018-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Buyukbas-Ulusan, A.
Altındal-Yerişkin, S.
Tataroğlu, A.
Text and Data Mining valid from 2018-07-31
Article History
Received: 27 April 2018
Accepted: 27 July 2018
First Online: 31 July 2018