MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications
Crossref DOI link: https://doi.org/10.1007/s10854-019-00702-9
Published Online: 2019-01-19
Published Print: 2019-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wośko, Mateusz http://orcid.org/0000-0001-8350-6880
Szymański, Tomasz
Paszkiewicz, Bogdan
Pokryszka, Piotr
Paszkiewicz, Regina
Text and Data Mining valid from 2019-01-19
Article History
Received: 18 September 2018
Accepted: 5 January 2019
First Online: 19 January 2019