Temperature dependant electronic charge transport characteristics at MX2 (M = Mo, W; X = S, Se)/Si heterojunction devices
Crossref DOI link: https://doi.org/10.1007/s10854-019-00703-8
Published Online: 2019-01-09
Published Print: 2019-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sumesh, C. K. http://orcid.org/0000-0001-6035-9312
Text and Data Mining valid from 2019-01-09
Article History
Received: 3 July 2018
Accepted: 5 January 2019
First Online: 9 January 2019