Electrical properties of thin silicon oxides grown at room temperature by ion beam sputtering technique
Crossref DOI link: https://doi.org/10.1007/s10854-019-00782-7
Published Online: 2019-01-28
Published Print: 2019-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ferrandis, Philippe http://orcid.org/0000-0003-2901-2120
Kanoun, Mehdi
André, Bernard
Text and Data Mining valid from 2019-01-28
Article History
Received: 23 October 2018
Accepted: 21 January 2019
First Online: 28 January 2019