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Structural and ferroelectric properties of Pr doped HfO2 thin films fabricated by chemical solution method

Crossref DOI link: https://doi.org/10.1007/s10854-019-00874-4

Published Online: 2019-02-20

Published Print: 2019-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Liu, Heng

Zheng, Shuaizhi

Chen, Qiang

Zeng, Binjian

Jiang, Jie

Peng, Qiangxiang

Liao, Min

Zhou, Yichun
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51702273)

Huxiang Young Talents Plan (2018RS3087)

Science and Technology Innovation Project of Hunan Province (2017XK2048)
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Article History

Received: 9 January 2019

Accepted: 31 January 2019

First Online: 20 February 2019