On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K
Crossref DOI link: https://doi.org/10.1007/s10854-019-01233-z
Published Online: 2019-04-01
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Durmuş, Haziret
Yıldırım, Mert http://orcid.org/0000-0002-8526-1802
Altındal, Şemsettin
Text and Data Mining valid from 2019-04-01
Article History
Received: 11 January 2019
Accepted: 26 March 2019
First Online: 1 April 2019