High-performance low voltage operation of indium zinc tin oxide thin film transistors using chemically derived sodium β-alumina dielectric
Crossref DOI link: https://doi.org/10.1007/s10854-019-01238-8
Published Online: 2019-03-30
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pujar, Pavan
Gupta, Dipti
Mandal, Saumen http://orcid.org/0000-0003-2867-1204
Funding for this research was provided by:
Science and Engineering research board, Govt. of India (ECR/2015/000339)
Text and Data Mining valid from 2019-03-30
Article History
Received: 5 January 2019
Accepted: 27 March 2019
First Online: 30 March 2019