III-Nitride-based junction devices round contacts: effect of semiconductor film geometry and characteristics on the capacitance and conductance measurements
Crossref DOI link: https://doi.org/10.1007/s10854-019-01459-x
Published Online: 2019-05-07
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pozos, Heberto Gómez http://orcid.org/0000-0001-8867-8534
Maldonado, Arturo
Izpura, J. I.
Muñoz, Elías
Text and Data Mining valid from 2019-05-07
Article History
Received: 21 December 2018
Accepted: 2 May 2019
First Online: 7 May 2019