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Effects of modulation doped n-AlGaN epilayers on the optoelectronic properties of 278-nm AlGaN-based flip-chip light-emitting devices

Crossref DOI link: https://doi.org/10.1007/s10854-019-01564-x

Published Online: 2019-05-25

Published Print: 2019-07-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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