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Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation

Published Online: 2019-06-04

Published Print: 2019-07-01

Authors

Wang, Xing https://orcid.org/0000-0002-5151-8905
Liu, Hongxia

Zhao, Lu

Wang, Yongte

Wang, Shulong
Funding

Funding for this research was provided by:

Postdoctoral Research Foundation of China (2018M633460)

Fundamental Research Funds for the Central Universities (JB181105)

National Natural Science Foundation of China (U1866212)

111 project (B12026)
License Information

Text and Data Mining valid from 2019-06-04

Version of Record valid from 2019-06-04
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Article History

Received: 19 April 2019

Accepted: 29 May 2019

First Online: 4 June 2019

Compliance with ethical standards

:

: The authors declare that they have no conflict of interest.

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