Resistive switching memory utilizing water and titanium dioxide thin film Schottky diode
Crossref DOI link: https://doi.org/10.1007/s10854-019-02227-7
Published Online: 2019-09-26
Published Print: 2019-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Khan, Muhammad Umair
Hassan, Gul
Bae, Jinho https://orcid.org/0000-0002-5298-0122
Funding for this research was provided by:
National Research Foundation of Korea (2016R1A2B4015627, 2019R1H1A2086726)
Text and Data Mining valid from 2019-09-26
Version of Record valid from 2019-09-26
Article History
Received: 17 June 2019
Accepted: 18 September 2019
First Online: 26 September 2019