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Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE

Crossref DOI link: https://doi.org/10.1007/s10854-019-02247-3

Published Online: 2019-09-28

Published Print: 2019-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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