Crossmark

Near-band-edge emission enhancement and suppression of the deep levels in Ga-doped ZnO via surface plasmon-exciton coupling without a dielectric spacer

Crossref DOI link: https://doi.org/10.1007/s10854-019-02418-2

Published Online: 2019-10-22

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Hassan, Ali https://orcid.org/0000-0002-0066-2296
Iqbal, Muhammad Faisal

Maksym, Stetsenko

Tetiana, Margitych

Azam, Muhammad

Kanwal, Zarfishan

Irfan, Iqra

Li, Βaikui

Jiang, Yijian
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (11674018)

National Natural Science Foundation of China (11504012)

National Natural Science Foundation of China (61604098)

Shenzhen Science and Technology Innovation Commission (20170412110137562)
License Information

Text and Data Mining valid from 2019-10-22

Version of Record valid from 2019-10-22
More Information

Article History

Received: 17 August 2019

Accepted: 18 October 2019

First Online: 22 October 2019

Compliance with ethical standards

:

: There are no conflicts to declare.

Document is current

Any future updates will be listed below