Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications
Crossref DOI link: https://doi.org/10.1007/s10854-019-02442-2
Published Online: 2019-11-09
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, J. H.
Park, J. H.
Ko, D.-H. http://orcid.org/0000-0002-5198-0163
Text and Data Mining valid from 2019-11-09
Version of Record valid from 2019-11-09
Article History
Received: 25 July 2019
Accepted: 23 October 2019
First Online: 9 November 2019