Effects of quantum well thickness and aluminum content of electron blocking layer on InGaN-based laser diodes
Crossref DOI link: https://doi.org/10.1007/s10854-019-02539-8
Published Online: 2019-11-16
Published Print: 2020-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zhou, M. http://orcid.org/0000-0002-2064-8918
Liang, F.
Zhao, D. G.
Funding for this research was provided by:
National Natural Science Foundation of China (61474142, 21403297and 11474355)
Text and Data Mining valid from 2019-11-16
Version of Record valid from 2019-11-16
Article History
Received: 20 August 2019
Accepted: 6 November 2019
First Online: 16 November 2019