MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band
Crossref DOI link: https://doi.org/10.1007/s10854-020-03012-7
Published Online: 2020-02-12
Published Print: 2020-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Aouassa, Mansour http://orcid.org/0000-0001-5068-9924
Franzò, Giorgia
Assaf, Elie
Sfaxi, Larbi
M’Ghaieth, Ridha
Maaref, Hassen
Text and Data Mining valid from 2020-02-12
Version of Record valid from 2020-02-12
Article History
Received: 9 December 2019
Accepted: 29 January 2020
First Online: 12 February 2020