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Efficiency enhancement of TiOx electron-transporting layer-based ultrathin p-type c-Si solar cell by reactive sputtering of backside MoOx hole-transporting contact

Crossref DOI link: https://doi.org/10.1007/s10854-020-03197-x

Published Online: 2020-03-18

Published Print: 2020-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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