Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
Crossref DOI link: https://doi.org/10.1007/s10854-020-03322-w
Published Online: 2020-04-18
Published Print: 2020-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Turut, A.
Yıldız, D. E.
Karabulut, A.
Orak, İ.
Text and Data Mining valid from 2020-04-18
Version of Record valid from 2020-04-18
Article History
Received: 22 January 2020
Accepted: 26 March 2020
First Online: 18 April 2020