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Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition

Crossref DOI link: https://doi.org/10.1007/s10854-020-03524-2

Published Online: 2020-05-06

Published Print: 2020-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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