Effect of Ba(Mg1/3Nb2/3)O3 buffer layer on electrical properties of PZT-based films
Crossref DOI link: https://doi.org/10.1007/s10854-020-03538-w
Published Online: 2020-05-13
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shao, Yajie
Zhou, Jing http://orcid.org/0000-0003-1774-085X
Chen, Wen
Shen, Jie
Wang, Zhiqing
Funding for this research was provided by:
National Natural Science Foundation of China (41150861)
National Natural Science Foundation of China (51802093)
Text and Data Mining valid from 2020-05-13
Version of Record valid from 2020-05-13
Article History
Received: 19 January 2020
Accepted: 2 May 2020
First Online: 13 May 2020