Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms
Crossref DOI link: https://doi.org/10.1007/s10854-020-03903-9
Published Online: 2020-07-08
Published Print: 2020-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Saadi, M.
Gonon, P.
Vallée, C.
Jomni, F. https://orcid.org/0000-0001-5950-3460
Jalaguier, E.
Bsiesy, A.
Text and Data Mining valid from 2020-07-08
Version of Record valid from 2020-07-08
Article History
Received: 15 April 2020
Accepted: 28 June 2020
First Online: 8 July 2020