Lanthanum-doped BiFeO3/ZrO2 gate stack for ferroelectric field effect transistors
Crossref DOI link: https://doi.org/10.1007/s10854-020-04073-4
Published Online: 2020-09-01
Published Print: 2020-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Amit http://orcid.org/0000-0001-9443-670X
Singh, Sanjai
Text and Data Mining valid from 2020-09-01
Version of Record valid from 2020-09-01
Article History
Received: 4 June 2020
Accepted: 22 July 2020
First Online: 1 September 2020
Compliance with ethical standards
:
: There is no conflict of interest.