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Band gap and gate metal engineering of novel hetero-material InAs/GaAs-based JLTFET for improved wireless applications

Published Online: 2021-01-01

Published Print: 2021-02

Authors

Sharma, Samriti

Chaujar, Rishu https://orcid.org/0000-0003-0705-3837
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Text and Data Mining valid from 2021-01-01

Version of Record valid from 2021-01-01
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Article History

Received: 13 August 2020

Accepted: 7 December 2020

First Online: 1 January 2021

Compliance with ethical standards

:

: The authors have no relevant financial or non-financial interests to disclose.

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