Effect of oxygen partial pressure on the behavior of Ga-doped ZnO/p-Si heterojunction diodes fabricated by reactive sputtering
Crossref DOI link: https://doi.org/10.1007/s10854-020-05169-7
Published Online: 2021-01-12
Published Print: 2021-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mondal, Praloy http://orcid.org/0000-0003-3601-4722
Appani, Shravan K.
Sutar, D. S.
Major, S. S.
Text and Data Mining valid from 2021-01-12
Version of Record valid from 2021-01-12
Article History
Received: 6 November 2020
Accepted: 22 December 2020
First Online: 12 January 2021